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| FDD5353 N-Channel Power Trench(R) MOSFET March 2008 FDD5353 N-Channel Power Trench MOSFET 60V, 50A, 12.3m Features Max rDS(on) = 12.3m at VGS = 10V, ID = 10.7A Max rDS(on) = 15.4m at VGS = 4.5V, ID = 9.5A 100% UIL Tested RoHS Compliant (R) tm General Description This N-Channel MOSFET is produced using Fairchild Semiconductor`s advanced Power Trench(R) process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Application Inverter Synchronous rectifier Primary switch D D G S G D -PA52 TO -2 K (TO -252) S MOSFET Maximum Ratings TC = 25C unless otherwise noted Symbol VDS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous (Package limited) ID -Continuous (Silicon limited) -Continuous -Pulsed EAS PD TJ, TSTG Single Pulse Avalanche Energy Power Dissipation Power Dissipation TC = 25C TA = 25C (Note 1a) (Note 3) TC = 25C TC = 25C TA = 25C (Note 1a) Ratings 60 20 50 54 11.5 100 253 69 3.1 -55 to +150 mJ W C A Units V V Operating and Storage Junction Temperature Range Thermal Characteristics RJC RJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient (Note 1a) 1.8 40 C/W Package Marking and Ordering Information Device Marking FDD5353 Device FDD5353 Package D-PAK (TO-252) Reel Size 13'' Tape Width 12mm Quantity 2500 units (c)2008 Fairchild Semiconductor Corporation FDD5353 Rev.C 1 www.fairchildsemi.com FDD5353 N-Channel Power Trench(R) MOSFET Electrical Characteristics TJ = 25C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS BVDSS TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 250A, VGS = 0V ID = 250A, referenced to 25C VGS = 0V, VDS = 48V, VGS = 20V, VDS = 0V 60 77 1 100 V mV/C A nA On Characteristics VGS(th) VGS(th) TJ rDS(on) gFS Gate to Source Threshold Voltage Gate to Source Threshold Voltage Temperature Coefficient Static Drain to Source On Resistance Forward Transconductance VGS = VDS, ID = 250A ID = 250A, referenced to 25C VGS = 10V, ID = 10.7A VGS = 4.5V, ID = 9.5A VGS = 10V, ID = 10.7A, TJ = 125C VDD = 5V, ID = 10.7A 1.0 1.8 -8 10.1 12.1 16.7 41 12.3 15.4 20.3 S m 3.0 V mV/C Dynamic Characteristics Ciss Coss Crss Rg Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance VDS = 30V, VGS = 0V, f = 1MHz f = 1MHz 2420 215 120 1.7 3215 285 180 pF pF pF Switching Characteristics td(on) tr td(off) tf Qg Qg Qgs Qgd Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Total Gate Charge Gate to Source Charge Gate to Drain "Miller" Charge VGS = 0V to 10V VGS = 0V to 4.5V VDD = 30V, ID = 10.7A VDD = 30V, ID = 10.7A, VGS = 10V, RGEN = 6 11 6 36 4 46 23 7 9 20 11 58 10 65 32 ns ns ns ns nC nC nC nC Drain-Source Diode Characteristics VSD trr Qrr Source to Drain Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0V, IS = 10.7A VGS = 0V, IS = 2.6A (Note 2) (Note 2) 0.8 0.7 28 21 1.3 1.2 45 34 V ns nC IF = 10.7A, di/dt = 100A/s Notes: 1: RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RJA is determined by the user's board design. a) 40C/W when mounted on a 1 in2 pad of 2 oz copper b) 96C/W when mounted on a minimum pad. 2: Pulse Test: Pulse Width < 300s, Duty cycle < 2.0%. 3: Starting TJ = 25C, L = 3mH, IAS = 13A, VDD = 60V, VGS = 10V. (c)2008 Fairchild Semiconductor Corporation FDD5353 Rev.C 2 www.fairchildsemi.com FDD5353 N-Channel Power Trench(R) MOSFET Typical Characteristics TJ = 25C unless otherwise noted 100 VGS = 10V 3.0 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 80 ID, DRAIN CURRENT (A) VGS = 4.5V VGS = 4V 2.5 2.0 VGS = 3V VGS = 3.5V VGS = 4V VGS = 4.5V 60 VGS = 3.5V 40 PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX 1.5 1.0 PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX 20 VGS = 3V VGS = 10V 0 0 1 2 3 4 5 VDS, DRAIN TO SOURCE VOLTAGE (V) 0.5 0 20 40 60 80 100 ID, DRAIN CURRENT(A) Figure 1. On-Region Characteristics Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 40 SOURCE ON-RESISTANCE (m) 2.0 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 -75 ID = 10.7A VGS = 10V rDS(on), DRAIN TO PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX 32 ID = 10.7A 24 TJ = 125oC 16 8 0 TJ = 25oC -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) 2 3 4 5 6 7 8 9 10 VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. Normalized On- Resistance vs Junction Temperature 100 IS, REVERSE DRAIN CURRENT (A) Figure 4. On-Resistance vs Gate to Source Voltage 200 100 PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX VGS = 0V 80 ID, DRAIN CURRENT (A) VDS = 5V 10 TJ = 150oC 60 TJ = 150oC 1 0.1 0.01 TJ = 25oC 40 TJ = 25oC 20 TJ = -55oC TJ = -55oC 0 1 2 3 4 5 VGS, GATE TO SOURCE VOLTAGE (V) 0.001 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current (c)2008 Fairchild Semiconductor Corporation FDD5353 Rev.C 3 www.fairchildsemi.com FDD5353 N-Channel Power Trench(R) MOSFET Typical Characteristics TJ = 25C unless otherwise noted 10 VGS, GATE TO SOURCE VOLTAGE(V) ID = 10.7A VDD = 20V CAPACITANCE (pF) 10000 Ciss 8 1000 Coss 6 VDD = 30V 4 VDD = 40V 100 f = 1MHz VGS = 0V Crss 2 0 0 10 20 30 40 50 Qg, GATE CHARGE(nC) 10 0.1 1 10 30 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain to Source Voltage 60 ID, DRAIN CURRENT (A) 20 IAS, AVALANCHE CURRENT(A) 10 TJ = 25oC 50 VGS = 10V 40 30 20 RJC = 1.8 C/W o Limited by Package VGS = 4.5V TJ = 125oC 10 1 0.01 0 25 0.1 1 10 100 50 75 100 o 125 150 tAV, TIME IN AVALANCHE(ms) TC, CASE TEMPERATURE ( C) Figure 9. Unclamped Inductive Switching Capability 200 100 ID, DRAIN CURRENT (A) Figure 10. Maximum Continuous Drain Current vs Case Temperature 10 100us 5 P(PK), PEAK TRANSIENT POWER (W) VGS = 10V 1ms 10 4 10 THIS AREA IS LIMITED BY rDS(on) 10 3 SINGLE PULSE RJC = 1.8oC/W TC = 25oC 10ms 100ms 1 SINGLE PULSE TJ = MAX RATED RJC = 1.8oC/W TC = 25oC 10 2 DC 0.1 0.1 1 10 100 200 10 -6 10 10 -5 10 -4 10 -3 10 -2 10 -1 1 VDS, DRAIN to SOURCE VOLTAGE (V) t, PULSE WIDTH (sec) Figure 11. Forward Bias Safe Operating Area Figure 12. Single Pulse Maximum Power Dissipation (c)2008 Fairchild Semiconductor Corporation FDD5353 Rev.C 4 www.fairchildsemi.com FDD5353 N-Channel Power Trench(R) MOSFET Typical Characteristics TJ = 25C unless otherwise noted 2 1 NORMALIZED THERMAL IMPEDANCE, ZJC DUTY CYCLE-DESCENDING ORDER 0.1 D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM 0.01 SINGLE PULSE t1 t2 o 0.001 5E-4 -6 10 RJC = 1.8 C/W NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJc x RJc + TC 10 -5 10 -4 10 -3 10 -2 10 -1 1 t, RECTANGULAR PULSE DURATION (sec) Figure 13. Transient Thermal Response Curve 2 1 NORMALIZED THERMAL IMPEDANCE, ZJA DUTY CYCLE-DESCENDING ORDER 0.1 0.01 D = 0.5 0.2 0.1 0.05 0.02 0.01 SINGLE PULSE PDM t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJA x RJA + TA 0.001 RJA = 96 C/W (Note 1b) o 0.0001 -4 10 10 -3 10 -2 10 -1 1 10 100 1000 t, RECTANGULAR PULSE DURATION (sec) Figure 14. Transient Thermal Response Curve (c)2008 Fairchild Semiconductor Corporation FDD5353 Rev.C 5 www.fairchildsemi.com FDD5353 N-Channel Power Trench(R) MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidianries, and is not intended to be an exhaustive list of all such trademarks. ACEx(R) Build it NowTM CorePLUSTM CorePOWERTM CROSSVOLTTM CTLTM Current Transfer LogicTM EcoSPARK(R) EfficentMaxTM EZSWITCHTM * TM (R) Fairchild(R) Fairchild Semiconductor(R) FACT Quiet SeriesTM FACT(R) FAST(R) FastvCoreTM FlashWriter(R) * tm FPSTM F-PFSTM FRFET(R) Global Power ResourceSM Green FPSTM Green FPSTM e-SeriesTM GTOTM IntelliMAXTM ISOPLANARTM MegaBuckTM MICROCOUPLERTM MicroFETTM MicroPakTM MillerDriveTM MotionMaxTM Motion-SPMTM OPTOLOGIC(R) OPTOPLANAR(R) (R) tm PDP-SPMTM Power-SPMTM PowerTrench(R) Programmable Active DroopTM QFET(R) QSTM Quiet SeriesTM RapidConfigureTM Saving our world 1mW at a timeTM SmartMaxTM SMART STARTTM SPM(R) STEALTHTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SuperMOSTM (R) The Power Franchise(R) tm TinyBoostTM TinyBuckTM TinyLogic(R) TINYOPTOTM TinyPowerTM TinyPWMTM TinyWireTM SerDesTM UHC(R) Ultra FRFETTM UniFETTM VCXTM VisualMaxTM * EZSWITCHTM and FlashWriter(R) are trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. This datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I34 Preliminary First Production No Identification Needed Obsolete Full Production Not In Production (c)2008 Fairchild Semiconductor Corporation FDD5353 Rev.C www.fairchildsemi.com |
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